2SB892 transistor (pnp) feature power dissipation p cm : 1 w (tamb=25 ) collector current i cm : -2 a collector-base voltage v (br)cbo : -60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v(br) cbo ic= -10 a , i e =0 -60 v collector-emitter breakdown voltage v(br) ceo i c = -1ma , i b =0 -50 v emitter-base breakdown voltage v(br) ebo i e =- 100 a, i c =0 -6 v collector cut-off current i cbo v cb = -50v , i e =0 -0.1 a emitter cut-off current i ebo v eb = -4v , i c =0 -0.1 a h fe(1) v ce =-2v, i c = -100ma 100 560 dc current gain h fe(2) v ce =-2v, i c = -1.5a 40 collector-emitter saturation voltage v ce(sat) i c = -1a, i b = -50ma -0.4 v base-emitter saturation voltage v be(sat) i c = -1a, i b = -50ma -1.2 v transition frequency f t v ce = -10 v, i c = -50ma 150 mhz classification of h fe(1) rank r s t u range 100-200 140-280 200-400 280-560 to-92mod 1. emitter 2. collector 3. base 123 2SB892 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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